The subject of capillary-driven morphological evolution of surfaces and interfaces in condensed matter continues to be a challenging theoretical problem in materials science, especially under the action of applied force fields (e.g. electrostatic and thermo-mechanical stress systems). In this respect, electromigration-induced damage, which is in principal an irreversible mass diffusion under high current density, has been a concern for VLSI design for a long time. Thin film metallic structures (interconnects) of microelectronics industry, having a so called bamboo structure, contains many grain boundaries intersecting with free surfaces (grooves). The joint action of capillary, electromigraiton, and elastostatic forces promotes failure at these sites. On the other hand electrons traveling from cathode to anode side results in vacancy condensation at the cathode side that will form voids. A bicrystal physical model is subjected to the calculations foreseen by the Irreversible Thermokinetic Theory of Surfaces and Interfaces to simulate these two failure modes.